![]() Containing Papers of a Mathematical and Physical Character. Zener, C.: A theory of the electrical breakdown of solid dielectrics. Zhang, Q., Lu, Y., Richter, C.A., Jena, D., Seabaugh, A.: Optimum bandgap and supply voltage in tunnel FETs. Teherani, J.T., Agarwal, S., Chern, W., Solomon, P.M., Yablonovitch, E., Antoniadis, D.A.: Auger generation as an intrinsic limit to tunneling field-effect transistor performance. ![]() Sajjad, R., Chern, W., Hoyt, J.L., Antoniadis, D.A.: Trap assisted tunneling and its effect on subthreshold swing of tunnel FETs. Seabaugh, A.C., Zhang, Q.: Low-voltage tunnel transistors for beyond CMOS logic. Ionescu, A.M., Riel, H.: Tunnel field-effect transistors as energy-efficient electronic switches. 1(8), 442–450 (2018)ĭennard, R.H., Gaensslen, F.H., Rideout, V.L., Bassous, E., LeBlanc, A.R.: Design of ion-implanted MOSFET’s with very small physical dimensions. Salahuddin, S., Ni, K., Datta, S.: The era of hyper-scaling in electronics. Moore, G.E.: Cramming more components onto integrated circuits. After about 15 years of intense research and steady progress across a plethora of materials systems, spanning from group IV materials, such as Si, to III–V compounds, to two-dimensional materials and mixed-dimensional heterostructures, as well as through different device architectures, an updated benchmark of best reported TFETs is provided to benchmark the state of the art across materials systems. In light of the physical challenges, the benefits of adopting a heterojunction device architecture are presented. This sets the stage for understanding electrical characteristics, design trade-offs, critical challenges, and source of nonidealities. Starting from band-to-band tunneling theory, this chapter aims to give a comprehensive overview of the TFET and its principles of operation. Since the first successful demonstration of a subthermionic TFET in 2004, research efforts have been devoted to the study and engineering of TFETs for low-power and energy-efficient integrated circuit applications. The tunnel field-effect transistor (TFET) relies on interband tunneling to achieve subthreshold swing below the 60 mV/dec fundamental limit at room temperature of bipolar and field-effect transistors.
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